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DATA SHEET
GaAs INTEGRATED CIRCUIT
PG103B
WIDE-BAND AMPLIFIER
PG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifiers.
This device is most suitable for the microwave communication system and the measurement equipment.
FEATURES
* Ultra wide band : f = 50 MHz to 3 GHz * Input/output impedance matched to 50 * Hermetic sealed ceramic package assures high reliability
ORDERING INFORMATION
PART NUMBER PACKAGE T-31, 8 PIN CERAMIC
PG103B
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain Voltage Gate Voltage Input Voltage Input Power Total Power Dissipation* Operating Case Temperature Storage Temperature * TC 125 C VDD VGG Vin Pin Ptot Topt Tstg +8 -8 -3 to +0.6 +15 1.5 -65 to +125 -65 to +175 V V V dBm W C C
RECOMMENDED OPERATING CONDITIONS (TA = 25 C)
Drain Voltage Gate Voltage Operating Case Temperature VDD VGG Topt +5.00.5 -5.00.5 -50 to +80 V V C
Document No. P11342EJ1V0DS00 (1st edition) Date Published March 1996 P Printed in Japan
(c)
1996
PG103B
ELECTRICAL CHARACTERISTICS (TA = 25 C, VDD = +5V, VGG = -5V)
CHARACTERISTIC Drain Current Gate Current Power Gain Power Gain Gain Flatness Gain Flatness Noise Figure Noise Figure Input Return Loss Input Return Loss Input Return Loss Output Return Loss Isolation Output Power at 1 dB Gain Compression Point SYMBOL IDD IGG Gp Gp Gp Gp NF NF RLin RLin RLin RLout ISOL Po (1dB) 6 10 6 10 30 +7 12 10 1.5 2.0 4.0 4.5 10 14 10 16 40 +9 2.0 3.0 4.5 5.0 MIN. 40 TYP. 55 1 MAX. 80 2 UNIT mA mA dB dB dB dB dB dB dB dB dB dB dB dBm f = 0.05 to 3 GHz f = 0.05 to 2 GHz f = 2 to 3 GHz f = 0.05 to 2 GHz f = 0.05 to 3 GHz f = 0.05 to 2 GHz f = 2 to 3 GHz f = 0.05 to 1 GHz f = 1 to 2 GHz f = 2 to 3 GHz TEST CONDITIONS RF OFF
TYPICAL PERFORMANCE CURVES
D.C. POWER DERATING CURVE 2.0
PT - Total Power Dissipation - W
1.5
1.0
0.5
0
50
100 125 150
200
TC - Case Temperature - C
2
PG103B
POWER GAIN AND NOISE FIGURE vs. FREQUENCY VDD = +5 V VGG = -5 V 20 Gp - Power Gain - dB 10 NF - Noise Figure - dB RL - Return Loss - dB 10 0
INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY VDD = +5 V VGG = -5 V
GP
20 in 30
out
10 NF
5
0 10
20
50 100 200
500 1000
5000
40 10
20
50 100 200
500 1000
5000
f - Frequency - MHz
f - Frequency - MHz
OUTPUT POWER vs. INPUT POWER ISOLATION vs. FREQUENCY 10 VDD = +5 V VGG = -5 V Po - Output Power - dBm +10 f = 1 GHz 2 GHz 3 GHz VDD = +5 V VGG = -5 V
ISOL - Isolation - dB
20
30
+5
40
50 10
20
50 100 200
500 1000
5000
0
-20
f - Frequency - MHz
-10 Pi - Input Power - dBm
0
3
PG103B
TEST CIRCUIT
VDD
1000 pF
7 IN 100 pF* 1 5 100 pF* OUT
3
2, 4, 6, 8
1000 pF
VGG * Chip capacitor
EQUIVALENT CIRCUIT
VDD C1 L3 C2
RL1 RF1 RL2 L1 IN C3 R1 R2 L2 C4
RL2
OUT
R4 R3 R5
R6
VGG
4
PG103B
OUTLINE DIMENSIONS (Unit : mm)
PACKAGE OUTLINE
1.270.11.270.1 4-0.6 4 3 4-0.4 2
10.6 MAX.
5
1
6
7 3.80.2
8
10.6 MAX.
1.7 MAX. 0.2 -0.02
+0.05
PIN CONNECTIONS:
1. 2. 3. 4. 5. 6. 7. 8. INPUT GND VGG GND OUTPUT GND VDD GND
5
PG103B
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions.
TYPES OF SURFACE MOUNT DEVICE
For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (C10535EJ7V0IF00).
PG103B
Soldering process Infrared ray reflow Soldering conditions Peak package's surface temperature: 230 C or below, Reflow time: 10 seconds or below (210 C or higher), Number of reflow process: 1, Exposure limit*: None Terminal temperature: 260 C or below, Flow time: 10 seconds or below, Exposure limit*: None Symbol
Partial heating method
*
Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less.
Note Do not apply more than a single process at once, except for "Partial heating method". PRECAUTION This IC must be handled with great care to prevent static discharge because its circuitry is composed of GaAs MES FET.
Caution
The Grate Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the Japanese law concerned. Keep the Japanese law concerned and so on, especially in case of removal.
6
PG103B
[MEMO]
7
PD103B
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
2

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